HGT1S10N120BNST
HGT1S10N120BNST
Part Number HGT1S10N120BNST
Description IGBT 1200V 35A 298W TO263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lead Time To be Confirmed
Detailed Description IGBT NPT 1200V 35A 298W Surface Mount TO-263AB
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HGT1S10N120BNST - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet HGT(G,P)10N120BN, HGT1S10N120BNS
Standard Package 1
Manufacturer ON Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 35A
Current - Collector Pulsed (Icm) 80A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 298W
Switching Energy 320µJ (on), 800µJ (off)
Input Type Standard
Gate Charge 100nC
Td (on/off) @ 25°C 23ns/165ns
Test Condition 960V, 10A, 10Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Base Part Number HGT1S10N120
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