Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	HGT(G,P)10N120BN, HGT1S10N120BNS
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	35A
Current - Collector Pulsed (Icm)	80A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Power - Max	298W
Switching Energy	320µJ (on), 800µJ (off)
Input Type	Standard
Gate Charge	100nC
Td (on/off) @ 25°C	23ns/165ns
Test Condition	960V, 10A, 10Ohm, 15V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AB
Base Part Number	HGT1S10N120

RGT40NS65DGTL	Rohm Semiconductor, IGBT Trench Field Stop 650V 40A 161W Surface Mount LPDS (TO-263S),	View
STGW40H65DFB	STMicroelectronics, IGBT Trench Field Stop 650V 80A 283W Through Hole TO-247,	View
IRG4PC40SPBF	Infineon Technologies, IGBT 600V 60A 160W Through Hole TO-247AC,	View
STGB30H60DLFB	STMicroelectronics, IGBT Trench Field Stop 600V 60A 260W Surface Mount D2PAK,	View
STGWA40IH65DF	STMicroelectronics, IGBT Trench Field Stop 650V 80A 238W Through Hole TO-247 Long Leads, IH	View
IHW20N120R3FKSA1	Infineon Technologies, IGBT Trench 1200V 40A 310W Through Hole PG-TO247-3, TrenchStop®	View
IRG7PH35UDPBF	Infineon Technologies, IGBT Trench 1200V 50A 180W Through Hole TO-247AC,	View
RGT40TS65DGC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 40A 144W Through Hole TO-247N,	View
APT50GR120B2	Microsemi Corporation, IGBT NPT 1200V 117A 694W Through Hole TO-247,	View
STGWT80V60F	STMicroelectronics, IGBT Trench Field Stop 600V 120A 469W Through Hole TO-3P,	View
IXGH32N170	IXYS, IGBT NPT 1700V 75A 350W Through Hole TO-247AD (IXGH),	View
IKW30N60TFKSA1	Infineon Technologies, IGBT Trench Field Stop 600V 60A 187W Through Hole PG-TO247-3, TrenchStop®	View

HGT1S10N120BNST

Part NumberHGT1S10N120BNST