HGTP12N60A4D


HGTP12N60A4D

Part NumberHGTP12N60A4D

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

HGTP12N60A4D - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet
Standard Package800
ManufacturerON Semiconductor
Series-
PackagingTube
Part StatusNot For New Designs
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)54A
Current - Collector Pulsed (Icm)96A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A
Power - Max167W
Switching Energy55µJ (on), 50µJ (off)
Input TypeStandard
Gate Charge78nC
Td (on/off) @ 25°C17ns/96ns
Test Condition390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)30ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
Base Part NumberHGTP12N60

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