Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA477EDJT-T1-GE3

SIA477EDJT-T1-GE3

SIA477EDJT-T1-GE3

Part NumberSIA477EDJT-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 12A SC70-6

DatasheetSIA477EDJT

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA477EDJT-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA477EDJT-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA477EDJT-T1-GE3.
We are offering SIA477EDJT-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA477EDJT-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA477EDJT
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	13mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	3050pF @ 6V
FET Feature	-
Power Dissipation (Max)	19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA477EDJT-T1-GE3 - Related Products

	NTNUS3171PZT5G	ON Semiconductor, P-Channel 20V 150mA (Ta) 125mW (Ta) Surface Mount SOT-1123,	View
	DMPH1006UPSQ-13	Diodes Incorporated, P-Channel 12V 80A (Tc) 3.2W Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
	DMP3098L-7	Diodes Incorporated, P-Channel 30V 3.8A (Ta) 1.08W (Ta) Surface Mount SOT-23-3,	View
	SI7149DP-T1-GE3	Vishay Siliconix, P-Channel 30V 50A (Tc) 69W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IRF9540STRLPBF	Vishay Siliconix, P-Channel 100V 19A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D2PAK,	View
	SIA445EDJ-T1-GE3	Vishay Siliconix, P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	FDWS9510L-F085	ON Semiconductor, P-Channel 40V 50A (Tc) 75W (Tj) Surface Mount 8-DFN (5.1x6.3), PowerTrench®	View
	DMP1080UCB4-7	Diodes Incorporated, P-Channel 12V 3.3A (Ta) 820mW (Ta) Surface Mount U-WLB1010-4,	View
	DMP2023UFDF-7	Diodes Incorporated, P-Channel 20V 7.6A (Ta) 730mW (Ta) Surface Mount U-DFN2020-6 (Type F),	View
	BSH201,215	Nexperia USA Inc., P-Channel 60V 300mA (Ta) 417mW (Ta) Surface Mount TO-236AB,	View
	SI7615ADN-T1-GE3	Vishay Siliconix, P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	FQU8P10TU	ON Semiconductor, P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK, QFET®	View

SIA477EDJT-T1-GE3 - Tags

SIA477EDJT-T1-GE3 SIA477EDJT-T1-GE3 PDF SIA477EDJT-T1-GE3 datasheet SIA477EDJT-T1-GE3 specification SIA477EDJT-T1-GE3 image SIA477EDJT-T1-GE3 India Renesas Electronics India SIA477EDJT-T1-GE3 buy SIA477EDJT-T1-GE3 SIA477EDJT-T1-GE3 price SIA477EDJT-T1-GE3 distributor SIA477EDJT-T1-GE3 supplier SIA477EDJT-T1-GE3 wholesales