SQ2303ES-T1_GE3
SQ2303ES-T1_GE3
Part Number SQ2303ES-T1_GE3
Description MOSFET P-CHAN 30V SOT23
Package / Case TO-236-3, SC-59, SOT-23-3
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Lead Time To be Confirmed
Detailed Description P-Channel 30V 2.5A (Tc) 1.9W (Tc) Surface Mount TO-236 (SOT-23)
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SQ2303ES-T1_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ2303ES
Standard Package 3000
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 25V
FET Feature -
Power Dissipation (Max) 1.9W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236 (SOT-23)
Package / Case TO-236-3, SC-59, SOT-23-3
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