SISS71DN-T1-GE3
SISS71DN-T1-GE3
Part Number SISS71DN-T1-GE3 Description MOSFET P-CH 100V 23A 1212-8 Package / Case PowerPAK® 1212-8SUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 100V 23A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
To learn about the specification of SISS71DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS71DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS71DN-T1-GE3.
We are offering SISS71DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISS71DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISS71DN Standard Package 1 Manufacturer Vishay Siliconix Series ThunderFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 23A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 50V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S (3.3x3.3) Package / Case PowerPAK® 1212-8S
SISS71DN-T1-GE3 - Related ProductsMore >>
BSP220,115 Nexperia USA Inc., P-Channel 200V 225mA (Ta) 1.5W (Ta) Surface Mount SC-73,
View
SI7461DP-T1-GE3 Vishay Siliconix, P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
BSP220,115 Nexperia USA Inc., P-Channel 200V 225mA (Ta) 1.5W (Ta) Surface Mount SC-73,
View
DMP21D2UFA-7B Diodes Incorporated, P-Channel 20V 330mA (Ta) 360mW (Ta) Surface Mount X2-DFN0806-3,
View
SIUD401ED-T1-GE3 Vishay Siliconix, P-Channel 30V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806, TrenchFET® Gen III
View
FDFMA2P029Z ON Semiconductor, P-Channel 20V 3.1A (Ta) 1.4W (Tj) Surface Mount 6-MicroFET (2x2), PowerTrench®
View
SSM3J334R,LF Toshiba Semiconductor and Storage, P-Channel 30V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI
View
FDZ661PZ ON Semiconductor, P-Channel 20V 2.6A (Ta) 1.3W (Ta) Surface Mount 4-WLCSP (0.8x0.8), PowerTrench®
View
FDS4685 ON Semiconductor, P-Channel 40V 8.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
NTHS5443T1G ON Semiconductor, P-Channel 20V 3.6A (Ta) 1.3W (Ta) Surface Mount ChipFET™,
View
SI4101DY-T1-GE3 Vishay Siliconix, P-Channel 30V 25.7A (Tc) 6W (Tc) Surface Mount 8-SO, TrenchFET®
View
SI4455DY-T1-E3 Vishay Siliconix, P-Channel 150V 2.8A (Tc) 3.1W (Ta), 5.9W (Tc) Surface Mount 8-SO, TrenchFET®
View
SISS71DN-T1-GE3 - Tags
English
