FDP8880
FDP8880
Part Number FDP8880 Description MOSFET N-CH 30V 54A TO-220AB Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 11A (Ta), 54A (Tc) 55W (Tc) Through Hole TO-220-3
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FDP8880 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB8880, FDP8880 Standard Package 800 Manufacturer ON Semiconductor Series PowerTrench® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 11.6mOhm @ 40A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 15V FET Feature - Power Dissipation (Max) 55W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3
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FDD5690 ON Semiconductor, N-Channel 60V 30A (Tc) 3.2W (Ta), 50W (Tc) Surface Mount TO-252, PowerTrench®
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DMG3406L-7 Diodes Incorporated, N-Channel 30V 3.6A (Ta) 770mW (Ta) Surface Mount SOT-23,
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SPW47N60C3FKSA1 Infineon Technologies, N-Channel 650V 47A (Tc) 415W (Tc) Through Hole PG-TO247-3, CoolMOS™
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BUK7237-55A,118 Nexperia USA Inc., N-Channel 55V 32.3A (Tc) 77W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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FDPF33N25TRDTU ON Semiconductor, N-Channel 250V 37W (Tc) Through Hole TO-220F (LG-Formed),
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