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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7212-55B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2453pF @ 25V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 185°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Rohm Semiconductor, N-Channel 30V 32A (Ta) 3W (Ta), 34.6W (Tc) Surface Mount 8-HSOP,
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SIJH440E-T1-GE3
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STMicroelectronics, N-Channel 650V 4.5A (Tc) 48W (Tc) Surface Mount PowerFlat™ (5x6) HV,
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ON Semiconductor, N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak, QFET®
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STMicroelectronics, N-Channel 100V 80A (Tc) 300W (Tc) Surface Mount D2PAK, STripFET™ II
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IRFR120NTRPBF
Infineon Technologies, N-Channel 100V 9.4A (Tc) 48W (Tc) Surface Mount D-Pak, HEXFET®
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AUIRF540Z
Infineon Technologies, N-Channel 100V 36A (Tc) 92W (Tc) Through Hole TO-220AB, HEXFET®
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