FDP61N20
FDP61N20
Part Number FDP61N20
Description MOSFET N-CH 200V 61A TO-220
Package / Case TO-220-3
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Lead Time To be Confirmed
Detailed Description N-Channel 200V 61A (Tc) 417W (Tc) Through Hole TO-220-3
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FDP61N20 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDP61N20
Standard Package 800
Manufacturer ON Semiconductor
Series UniFET™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3380pF @ 25V
FET Feature -
Power Dissipation (Max) 417W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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