CSD16570Q5BT

Part NumberCSD16570Q5BT

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	CSD16570Q5B
Standard Package	250
Manufacturer	Texas Instruments
Series	NexFET™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.59mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	14000pF @ 12V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 195W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-VSONP (5x6)
Package / Case	8-PowerTDFN

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PMT560ENEAX	Nexperia USA Inc., N-Channel 100V 1.1A (Ta) 750mW (Ta) Surface Mount SC-73,	View
IPB100N04S4H2ATMA1	Infineon Technologies, N-Channel 40V 100A (Tc) 115W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™	View

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