FDG410NZ
FDG410NZ
Part Number FDG410NZ Description MOSFET N-CH 20V 2.2A SC70-6 Package / Case 6-TSSOP, SC-88, SOT-363Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 2.2A (Ta) 420mW (Ta) Surface Mount SC-88 (SC-70-6)
To learn about the specification of FDG410NZ, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FDG410NZ with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FDG410NZ.
We are offering FDG410NZ for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FDG410NZ - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDG410NZ Standard Package 3000 Manufacturer ON Semiconductor Series PowerTrench® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 70mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 535pF @ 10V FET Feature - Power Dissipation (Max) 420mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-88 (SC-70-6) Package / Case 6-TSSOP, SC-88, SOT-363
IPN60R360P7SATMA1 Infineon Technologies, N-Channel 600V 9A (Tc) 7W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
View
DMN2005UPS-13 Diodes Incorporated, N-Channel 20V 20A (Ta), 100A (Tc) 1.5W (Ta) Surface Mount PowerDI5060-8,
View
IRFR430ATRPBF Vishay Siliconix, N-Channel 500V 5A (Tc) 110W (Tc) Surface Mount,
View
IPU80R2K0P7AKMA1 Infineon Technologies, N-Channel 800V 3A (Tc) 24W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7
View
VN3205N3-G Microchip Technology, N-Channel 50V 1.2A (Tj) 1W (Tc) Through Hole TO-92-3,
View
FQB50N06LTM ON Semiconductor, N-Channel 60V 52.4A (Tc) 3.75W (Ta), 121W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
View
IPD053N08N3GATMA1 Infineon Technologies, N-Channel 80V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3, OptiMOS™
View
CSD17577Q3A Texas Instruments, N-Channel 30V 35A (Ta) 2.8W (Ta), 53W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™
View
SI7846DP-T1-GE3 Vishay Siliconix, N-Channel 150V 4A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
R6015ENZC8 Rohm Semiconductor, N-Channel 600V 15A (Tc) 120W (Tc) Through Hole TO-3PF,
View
IPB108N15N3GATMA1 Infineon Technologies, N-Channel 150V 83A (Tc) 214W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
PSMN6R0-30YLB,115 Nexperia USA Inc., N-Channel 30V 71A (Tc) 58W (Tc) Surface Mount LFPAK56, Power-SO8,
View
FDG410NZ - Tags
English
