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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD86369
Standard Package 2500
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2530pF @ 40V
FET Feature -
Power Dissipation (Max) 150W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
DMN26D0UT-7
Diodes Incorporated, N-Channel 20V 230mA (Ta) 300mW (Ta) Surface Mount SOT-523,
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FQP19N20C
ON Semiconductor, N-Channel 200V 19A (Tc) 139W (Tc) Through Hole TO-220-3, QFET®
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IRF1010ZSTRLPBF
Infineon Technologies, N-Channel 55V 75A (Tc) 140W (Tc) Surface Mount D2PAK, HEXFET®
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TN5335N8-G
Microchip Technology, N-Channel 350V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
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FDB2552-F085
ON Semiconductor, N-Channel 150V 5A (Ta), 37A (Tc) 150W (Tc) Surface Mount TO-263AB, Automotive, AEC-Q101, PowerTrench®
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IRFD224PBF
Vishay Siliconix, N-Channel 250V 630mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,
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STH3N150-2
STMicroelectronics, N-Channel 1500V 2.5A (Tc) 140W (Tc) Surface Mount H²PAK, PowerMESH™
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PSMN8R0-40BS,118
Nexperia USA Inc., N-Channel 40V 77A (Tc) 86W (Tc) Surface Mount D2PAK,
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IPN50R2K0CEATMA1
Infineon Technologies, N-Channel 500V 3.6A (Tc) 5W (Tc) Surface Mount PG-SOT223, CoolMOS™ CE
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BUK9640-100A,118
Nexperia USA Inc., N-Channel 100V 39A (Tc) 158W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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IRFD110PBF
Vishay Siliconix, N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,
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SI7478DP-T1-GE3
Vishay Siliconix, N-Channel 60V 15A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
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