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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD86369
Standard Package 2500
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2530pF @ 40V
FET Feature -
Power Dissipation (Max) 150W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
TK7J90E,S1E
Toshiba Semiconductor and Storage, N-Channel 900V 7A (Ta) 200W (Tc) Through Hole TO-3P(N), π-MOSVIII
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STL8N65M2
STMicroelectronics, N-Channel 650V Surface Mount,
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IPD60R1K4C6ATMA1
Infineon Technologies, N-Channel 600V 3.2A (Tc) 28.4W (Tc) Surface Mount PG-TO252-3, CoolMOS™ C6
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TSM070NA04LCR RLG
Taiwan Semiconductor Corporation, N-Channel 40V 91A (Tc) 113W (Tc) Surface Mount 8-PDFN (5x6),
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FDMS7660
ON Semiconductor, N-Channel 30V 25A (Ta), 42A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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IPW60R280C6FKSA1
Infineon Technologies, N-Channel 600V 13.8A (Tc) 104W (Tc) Through Hole PG-TO247-3, CoolMOS™
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BSS123-7-F
Diodes Incorporated, N-Channel 100V 170mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,
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TPWR8004PL,L1Q
Toshiba Semiconductor and Storage, N-Channel 40V 150A (Tc) 1W (Ta), 170W (Tc) Surface Mount 8-DSOP Advance, U-MOSIX-H
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FQD7N30TM
ON Semiconductor, N-Channel 300V 5.5A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak, QFET®
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IRF1405ZPBF
Infineon Technologies, N-Channel 55V 75A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®
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BSH111BKR
Nexperia USA Inc., N-Channel 55V 210mA (Ta) 302mW (Ta) Surface Mount TO-236AB,
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PMV20ENR
Nexperia USA Inc., N-Channel 30V 6A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB,
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