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FDD10N20LZTM

FDD10N20LZTM

Part NumberFDD10N20LZTM

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 200V 7.6A DPAK-3

DatasheetFDD10N20LZ

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 7.6A (Tc) 83W (Tc) Surface Mount DPAK

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FDD10N20LZTM - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDD10N20LZ
Standard Package	1
Manufacturer	ON Semiconductor
Series	UniFET™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	360mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	585pF @ 25V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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