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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_120
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
TN0702N3-G
Microchip Technology, N-Channel 20V 530mA (Tj) 1W (Tc) Through Hole TO-92-3,
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SUD90330E-GE3
Vishay Siliconix, N-Channel 200V 35.8A (Tc) 125W (Tc) Surface Mount TO-252AA, ThunderFET®
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FDD3706
ON Semiconductor, N-Channel 20V 14.7A (Ta), 50A (Tc) 3.8W (Ta), 44W (Tc) Surface Mount D-PAK (TO-252AA), PowerTrench®
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IPP65R190C7FKSA1
Infineon Technologies, N-Channel 650V 13A (Tc) 72W (Tc) Through Hole PG-TO220-3, CoolMOS™ C7
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R6015ENX
Rohm Semiconductor, N-Channel 600V 15A (Tc) 40W (Tc) Through Hole TO-220FM,
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IPD90N04S405ATMA1
Infineon Technologies, N-Channel 40V 86A (Tc) 65W (Tc) Surface Mount PG-TO252-3-313, Automotive, AEC-Q101, OptiMOS™
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PSMN013-100PS,127
Nexperia USA Inc., N-Channel 100V 68A (Tc) 170W (Tc) Through Hole TO-220AB,
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DMT6015LPS-13
Diodes Incorporated, N-Channel 60V 10.6A (Ta), 31A (Tc) 1.16W (Ta) Surface Mount PowerDI5060-8,
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IRFI820GPBF
Vishay Siliconix, N-Channel 500V 2.1A (Tc) 30W (Tc) Through Hole TO-220-3,
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SIHG47N60E-GE3
Vishay Siliconix, N-Channel 600V 47A (Tc) 357W (Tc) Through Hole TO-247AC,
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SIRA10BDP-T1-GE3
Vishay Siliconix, N-Channel 30V 30A (Ta), 60A (Tc) 5W (Ta), 43W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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PSMN8R3-40YS,115
Nexperia USA Inc., N-Channel 40V 70A (Tc) 74W (Tc) Surface Mount LFPAK56, Power-SO8,
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