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IPA65R1K0CEXKSA1

IPA65R1K0CEXKSA1

Part NumberIPA65R1K0CEXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 650V TO220-3

DatasheetIPA65R1K0CE

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 7.2A (Tc) 68W (Tc) Through Hole PG-TO220 Full Pack

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IPA65R1K0CEXKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPA65R1K0CE
Standard Package	500
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	15.3nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	328pF @ 100V
FET Feature	Super Junction
Power Dissipation (Max)	68W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220 Full Pack
Package / Case	TO-220-3 Full Pack

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IPA65R1K0CEXKSA1 - Tags

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