FCMT199N60


FCMT199N60

Part NumberFCMT199N60

Manufacturer

Description

Datasheet

Package / Case4-PowerTSFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

FCMT199N60 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
SeriesSuperFET® II
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs199mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs74nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2950pF @ 100V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePower88
Package / Case4-PowerTSFN

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FCMT199N60 - Tags

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