SI8410DB-T2-E1
SI8410DB-T2-E1
Part Number SI8410DB-T2-E1
Description MOSFET N-CH 20V MICROFOOT
Package / Case 4-UFBGA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 20V 780mW (Ta), 1.8W (Tc) Surface Mount 4-Micro Foot (1x1)
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SI8410DB-T2-E1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si8410DB
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 37mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 10V
FET Feature -
Power Dissipation (Max) 780mW (Ta), 1.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Micro Foot (1x1)
Package / Case 4-UFBGA
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