EPC2012C
EPC2012C
Part Number EPC2012C Manufacturer EPC Description GANFET TRANS 200V 5A BUMPED DIE Package / Case DieUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 5A (Ta) Surface Mount Die Outline (4-Solder Bar)
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EPC2012C - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet EPC2012C Datasheet Standard Package 1 Manufacturer EPC Series eGaN® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 100mOhm @ 3A, 5V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 5V Vgs (Max) +6V, -4V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 100V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Outline (4-Solder Bar) Package / Case Die
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EPC2012C - Tags
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