Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TP65H035WS
Standard Package	30
Manufacturer	Transphorm
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V
Rds On (Max) @ Id, Vgs	41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 400V
FET Feature	-
Power Dissipation (Max)	156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

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TP65H035WS

Part NumberTP65H035WS