Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ DMN2011UFDE-7

DMN2011UFDE-7

DMN2011UFDE-7

Part NumberDMN2011UFDE-7

ManufacturerDiodes Incorporated

DescriptionMOSFET N-CH 20V 11.7A UDFN2020-6

DatasheetDMN2011UFDE

Package / Case6-UDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 11.7A (Ta) 610mW (Ta) Surface Mount U-DFN2020-6 (Type E)

To learn about the specification of DMN2011UFDE-7, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add DMN2011UFDE-7 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of DMN2011UFDE-7.
We are offering DMN2011UFDE-7 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

DMN2011UFDE-7 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	DMN2011UFDE
Standard Package	3000
Manufacturer	Diodes Incorporated
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	11.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	9.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2248pF @ 10V
FET Feature	-
Power Dissipation (Max)	610mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	U-DFN2020-6 (Type E)
Package / Case	6-UDFN Exposed Pad
Base Part Number	DMN2011

DMN2011UFDE-7 - Related Products

	IRFPC50APBF	Vishay Siliconix, N-Channel 600V 11A (Tc) 180W (Tc) Through Hole TO-247-3,	View
	IRFU3910PBF	Infineon Technologies, N-Channel 100V 16A (Tc) 79W (Tc) Through Hole IPAK (TO-251), HEXFET®	View
	IRFD224PBF	Vishay Siliconix, N-Channel 250V 630mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	AOD444	Alpha & Omega Semiconductor Inc., N-Channel 60V 4A (Ta), 12A (Tc) 2.1W (Ta), 20W (Tc) Surface Mount TO-252, (D-Pak),	View
	CSD16415Q5T	Texas Instruments, N-Channel 25V 100A (Ta) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	IRF7470TRPBF	Infineon Technologies, N-Channel 40V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	IPP220N25NFDAKSA1	Infineon Technologies, N-Channel 250V 61A (Tc) 300W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	PSMN5R0-80PS,127	Nexperia USA Inc., N-Channel 80V 100A (Tc) 270W (Tc) Through Hole TO-220AB,	View
	IRFI740GPBF	Vishay Siliconix, N-Channel 400V 5.4A (Tc) 40W (Tc) Through Hole TO-220-3,	View
	STH275N8F7-2AG	STMicroelectronics, N-Channel 80V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2, Automotive, AEC-Q101, STripFET™ F7	View
	FDB86135	ON Semiconductor, N-Channel 100V 75A (Tc) 2.4W (Ta), 227W (Tc) Surface Mount D²PAK (TO-263AB), PowerTrench®	View
	IRFL210TRPBF	Vishay Siliconix, N-Channel 200V 960mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223,	View

DMN2011UFDE-7 - Tags

DMN2011UFDE-7 DMN2011UFDE-7 PDF DMN2011UFDE-7 datasheet DMN2011UFDE-7 specification DMN2011UFDE-7 image DMN2011UFDE-7 India Renesas Electronics India DMN2011UFDE-7 buy DMN2011UFDE-7 DMN2011UFDE-7 price DMN2011UFDE-7 distributor DMN2011UFDE-7 supplier DMN2011UFDE-7 wholesales