APT29F100B2


APT29F100B2

Part NumberAPT29F100B2

Manufacturer

Description

Datasheet

Package / CaseTO-247-3 Variant

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

APT29F100B2 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
SeriesPOWER MOS 8™
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs440mOhm @ 16A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds8500pF @ 25V
FET Feature-
Power Dissipation (Max)1040W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageT-MAX™ [B2]
Package / CaseTO-247-3 Variant

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APT29F100B2 - Tags

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