APT29F100B2
APT29F100B2
Part Number APT29F100B2 Description MOSFET N-CH 1000V 30A T-MAX Package / Case TO-247-3 VariantUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1000V 30A (Tc) 1040W (Tc) Through Hole T-MAX™ [B2]
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APT29F100B2 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet APT29F100(B2,L) Standard Package 1 Manufacturer Microsemi Corporation Series POWER MOS 8™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 440mOhm @ 16A, 10V Vgs(th) (Max) @ Id 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 8500pF @ 25V FET Feature - Power Dissipation (Max) 1040W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package T-MAX™ [B2] Package / Case TO-247-3 Variant
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