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IRLS640A

IRLS640A

Part NumberIRLS640A

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 200V 9.8A TO-220F

DatasheetIRLS640A

Package / CaseTO-220-3 Full Pack

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 9.8A (Tc) 40W (Tc) Through Hole TO-220F

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IRLS640A - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRLS640A
Standard Package	1000
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	180mOhm @ 4.9A, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1705pF @ 25V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F
Package / Case	TO-220-3 Full Pack

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IRLS640A - Tags

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