CSD19537Q3
CSD19537Q3
Part Number CSD19537Q3
Description MOSFET N-CH 100V 50A 8VSON
Package / Case 8-PowerVDFN
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Lead Time To be Confirmed
Detailed Description N-Channel 100V 50A (Ta) 2.8W (Ta), 83W (Tc) Surface Mount 8-VSON (3.3x3.3)
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CSD19537Q3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CSD19537Q3
Standard Package 2500
Manufacturer Texas Instruments
Series NexFET™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 14.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 50V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-VSON (3.3x3.3)
Package / Case 8-PowerVDFN
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