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R6030JNZ4C13

R6030JNZ4C13

Part NumberR6030JNZ4C13

ManufacturerRohm Semiconductor

DescriptionR6030JNZ4 IS A POWER MOSFET WITH

DatasheetR6030JNZ4

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 30A (Tc) 370W (Tc) Through Hole TO-247G

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R6030JNZ4C13 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	R6030JNZ4
Standard Package	30
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	143mOhm @ 15A, 15V
Vgs(th) (Max) @ Id	7V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs	74nC @ 15V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 100V
FET Feature	-
Power Dissipation (Max)	370W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247G
Package / Case	TO-247-3

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