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CSD13302W


CSD13302W

Part NumberCSD13302W

Manufacturer

Description

Datasheet

Package / Case4-UFBGA, DSBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

CSD13302W - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerTexas Instruments
SeriesNexFET™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs17.1mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.8nC @ 4.5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds862pF @ 6V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-DSBGA
Package / Case4-UFBGA, DSBGA

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