Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPW60R099P6XKSA1

IPW60R099P6XKSA1

IPW60R099P6XKSA1

Part NumberIPW60R099P6XKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 600V TO247-3

DatasheetIPx60R099P6

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 37.9A (Tc) 278W (Tc) Through Hole PG-TO247-3

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IPW60R099P6XKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx60R099P6
Standard Package	240
Manufacturer	Infineon Technologies
Series	CoolMOS™ P6
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3330pF @ 100V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3

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