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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9616-75B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 4034pF @ 25V
FET Feature -
Power Dissipation (Max) 157W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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ON Semiconductor, N-Channel 900V 5.4A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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Toshiba Semiconductor and Storage, N-Channel 800V 6A (Ta) 45W (Tc) Through Hole TO-220SIS, π-MOSVIII
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IXYS, N-Channel 850V 50A (Tc) 890W (Tc) Through Hole TO-264, HiPerFET™
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STD5N95K3
STMicroelectronics, N-Channel 950V 4A (Tc) 90W (Tc) Surface Mount DPAK, SuperMESH3™
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2SK2009TE85LF
Toshiba Semiconductor and Storage, N-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59-3,
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