TK6A80E,S4X
TK6A80E,S4X
Part Number TK6A80E,S4X
Description MOSFET N-CH 800V TO220SIS
Package / Case TO-220-3 Full Pack
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 800V 6A (Ta) 45W (Tc) Through Hole TO-220SIS
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TK6A80E,S4X - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK6A80E
Standard Package 50
Manufacturer Toshiba Semiconductor and Storage
Series π-MOSVIII
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
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