IPI045N10N3GXKSA1
IPI045N10N3GXKSA1
Part Number IPI045N10N3GXKSA1 Description MOSFET N-CH 100V 100A TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3
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IPI045N10N3GXKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPI045N10N3 G Standard Package 500 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8410pF @ 50V FET Feature - Power Dissipation (Max) 214W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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