RQ3E080GNTB
RQ3E080GNTB
Part Number RQ3E080GNTB Description MOSFET N-CH 30V 8A 8-HSMT Package / Case 8-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 8A (Ta) 2W (Ta), 15W (Tc) Surface Mount 8-HSMT (3.2x3)
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RQ3E080GNTB - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RQ3E080GN Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 16.7mOhm @ 8A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 295pF @ 15V FET Feature - Power Dissipation (Max) 2W (Ta), 15W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSMT (3.2x3) Package / Case 8-PowerVDFN
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