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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9606-40B
Standard Package 800
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 44nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 4901pF @ 25V
FET Feature -
Power Dissipation (Max) 203W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SI7456DDP-T1-GE3
Vishay Siliconix, N-Channel 100V 27.8A (Tc) 5W (Ta), 35.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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STH275N8F7-2AG
STMicroelectronics, N-Channel 80V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2, Automotive, AEC-Q101, STripFET™ F7
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STL36N55M5
STMicroelectronics, N-Channel 550V 22.5A (Tc) 2.8W (Ta), 150W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ V
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Nexperia USA Inc., N-Channel 55V 47.4A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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Infineon Technologies, N-Channel 40V 195A (Tc) 341W (Tc) Through Hole TO-247AC, HEXFET®
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IXYS, N-Channel 300V 72A (Tc) 390W (Tc) Through Hole TO-247, HiPerFET™
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TSM80N1R2CI C0G
Taiwan Semiconductor Corporation, N-Channel 800V 5.5A (Tc) 25W (Tc) Through Hole ITO-220AB,
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FDY302NZ
ON Semiconductor, N-Channel 20V 600mA (Ta) 625mW (Ta) Surface Mount SC-89-3, PowerTrench®
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Vishay Siliconix, N-Channel 800V 1.8A (Tc) 54W (Tc) Through Hole TO-220AB,
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