SIHD4N80E-GE3
SIHD4N80E-GE3
Part Number SIHD4N80E-GE3 Description MOSFET N-CHAN 800V FP TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 4.3A (Tc) 69W (Tc) Surface Mount D-PAK (TO-252AA)
To learn about the specification of SIHD4N80E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHD4N80E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHD4N80E-GE3.
We are offering SIHD4N80E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIHD4N80E-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHD4N80E Standard Package 3000 Manufacturer Vishay Siliconix Series E Packaging Bulk Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.27Ohm @ 2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 622pF @ 100V FET Feature - Power Dissipation (Max) 69W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252AA) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SIHD4N80E-GE3 - Related ProductsMore >>
IRLR120TRLPBF Vishay Siliconix, N-Channel 100V 7.7A (Tc) 42W (Tc) Surface Mount D-Pak,
View
IPB033N10N5LFATMA1 Infineon Technologies, N-Channel 100V 120A (Tc) 179W (Tc) Surface Mount PG-TO263-3, OptiMOS™-5
View
BSC252N10NSFGATMA1 Infineon Technologies, N-Channel 100V 7.2A (Ta), 40A (Tc) 78W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
View
TK20A60U(Q,M) Toshiba Semiconductor and Storage, N-Channel 600V 20A (Ta) 45W (Tc) Through Hole TO-220SIS, DTMOSII
View
DMN4800LSSL-13 Diodes Incorporated, N-Channel 30V 8A (Ta) 1.46W (Ta) Surface Mount 8-SO,
View
IRF624PBF Vishay Siliconix, N-Channel 250V 4.4A (Tc) 50W (Tc) Through Hole TO-220AB,
View
SI2300DS-T1-GE3 Vishay Siliconix, N-Channel 30V 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
IRLMS2002TRPBF Infineon Technologies, N-Channel 20V 6.5A (Ta) 2W (Ta) Surface Mount Micro6™(SOT23-6), HEXFET®
View
2N7002 TR Central Semiconductor Corp, N-Channel 60V 115mA (Tc) 350mW (Ta) Surface Mount SOT-23,
View
RU1C001UNTCL Rohm Semiconductor, N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount UMT3F,
View
DMN2011UTS-13 Diodes Incorporated, N-Channel 20V 21A (Tc) 1.3W (Ta) Surface Mount 8-TSSOP,
View
IRFR9N20DTRPBF Infineon Technologies, N-Channel 200V 9.4A (Tc) 86W (Tc) Surface Mount D-Pak, HEXFET®
View
SIHD4N80E-GE3 - Tags
English
