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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_320
Standard Package 3000
Manufacturer Vishay Siliconix
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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SI3424BDV-T1-GE3
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STP6NK90ZFP
STMicroelectronics, N-Channel 900V 5.8A (Tc) 30W (Tc) Through Hole TO-220FP, SuperMESH™
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IXYS, N-Channel 3000V 1A (Tc) 195W (Tc) Through Hole TO-247HV,
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STF40N65M2
STMicroelectronics, N-Channel 650V 32A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ M2
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VS-FC420SA15
Vishay Semiconductor Diodes Division, N-Channel 150V 400A (Tc) 909W (Tc) Chassis Mount SOT-227,
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IRFB3207PBF
Infineon Technologies, N-Channel 75V 170A (Tc) 330W (Tc) Through Hole TO-220AB, HEXFET®
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