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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_320
Standard Package 3000
Manufacturer Vishay Siliconix
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
BSC0906NSATMA1
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ON Semiconductor, N-Channel 200V 31A (Tc) 180W (Tc) Through Hole TO-220-3, QFET®
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Texas Instruments, N-Channel 30V 25A (Tc) 16W (Tc) Surface Mount 6-WSON (2x2), NexFET™
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2N7002PW,115
Nexperia USA Inc., N-Channel 60V 310mA (Ta) 260mW (Ta) Surface Mount SC-70,
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