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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_320
Standard Package 3000
Manufacturer Vishay Siliconix
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
STP4N150
STMicroelectronics, N-Channel 1500V 4A (Tc) 160W (Tc) Through Hole TO-220AB, PowerMESH™
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BSZ900N15NS3GATMA1
Infineon Technologies, N-Channel 150V 13A (Tc) 38W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
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DMG2302UK-7
Diodes Incorporated, N-Channel 20V 2.8A (Ta) 660mW (Ta) Surface Mount SOT-23, Automotive, AEC-Q101
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AOD1N60
Alpha & Omega Semiconductor Inc., N-Channel 600V 1.3A (Tc) 45W (Tc) Surface Mount TO-252, (D-Pak),
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SQM120N10-3M8_GE3
Vishay Siliconix, N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®
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NTD110N02RT4G
ON Semiconductor, N-Channel 24V 12.5A (Ta), 110A (Tc) 1.5W (Ta), 110W (Tc) Surface Mount DPAK,
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SIHP28N60EF-GE3
Vishay Siliconix, N-Channel 600V 28A (Tc) 250W (Tc) Through Hole TO-220AB,
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R6004KNX
Rohm Semiconductor, N-Channel 600V 4A (Tc) 40W (Tc) Through Hole TO-220FM,
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NTMFS4931NT1G
ON Semiconductor, N-Channel 30V 23A (Ta), 246A (Tc) 950mW (Ta) Surface Mount 5-DFN (5x6) (8-SOFL),
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STQ1NK60ZR-AP
STMicroelectronics, N-Channel 600V 300mA (Tc) 3W (Tc) Through Hole TO-92-3, SuperMESH™
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TK55S10N1,LQ
Toshiba Semiconductor and Storage, N-Channel 100V 55A (Ta) 157W (Tc) Surface Mount DPAK+, U-MOSVIII-H
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SIHG28N60EF-GE3
Vishay Siliconix, N-Channel 600V 28A (Tc) 250W (Tc) Through Hole TO-247AC,
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