Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR112DP-T1-RE3

SIR112DP-T1-RE3

SIR112DP-T1-RE3

Part NumberSIR112DP-T1-RE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 40V

DatasheetSIR112DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 37.6A (Ta), 133A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR112DP-T1-RE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR112DP-T1-RE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR112DP-T1-RE3.
We are offering SIR112DP-T1-RE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR112DP-T1-RE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR112DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	37.6A (Ta), 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.96mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	89nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	4270pF @ 20V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR112DP-T1-RE3 - Related Products

	SI3442BDV-T1-E3	Vishay Siliconix, N-Channel 20V 3A (Ta) 860mW (Ta) Surface Mount 6-TSOP, TrenchFET®	View
	IPP052N08N5AKSA1	Infineon Technologies, N-Channel 80V 80A (Tc) 125W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	IRFL4310TRPBF	Infineon Technologies, N-Channel 100V 1.6A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®	View
	AOD2922	Alpha & Omega Semiconductor Inc., N-Channel 100V 3.5A (Ta), 7A (Tc) 5W (Ta), 17W (Tc) Surface Mount TO-252, (D-Pak), AlphaMOS	View
	CSD18514Q5AT	Texas Instruments, N-Channel 40V 89A (Tc) 74W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	TK100S04N1L,LQ	Toshiba Semiconductor and Storage, N-Channel 40V 100A (Ta) 100W (Tc) Surface Mount DPAK+, U-MOSVIII-H	View
	STU5N52K3	STMicroelectronics, N-Channel 525V 4.4A (Tc) 70W (Tc) Through Hole I-PAK, SuperMESH3™	View
	IPA90R500C3XKSA1	Infineon Technologies, N-Channel 900V 11A (Tc) 34W (Tc) Through Hole PG-TO220-FP, CoolMOS™	View
	STP80N10F7	STMicroelectronics, N-Channel 100V 80A (Tc) 110W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VII	View
	FDD5670	ON Semiconductor, N-Channel 60V 52A (Ta) 3.8W (Ta), 83W (Tc) Surface Mount TO-252, PowerTrench®	View
	LSIC1MO120E0080	Littelfuse Inc., N-Channel 1200V 39A (Tc) 179W (Tc) Through Hole TO-247-3,	View
	MCH3486-TL-W	ON Semiconductor, N-Channel 60V 2A (Ta) 1W (Ta) Surface Mount SC-70FL/MCPH3,	View

SIR112DP-T1-RE3 - Tags

SIR112DP-T1-RE3 SIR112DP-T1-RE3 PDF SIR112DP-T1-RE3 datasheet SIR112DP-T1-RE3 specification SIR112DP-T1-RE3 image SIR112DP-T1-RE3 India Renesas Electronics India SIR112DP-T1-RE3 buy SIR112DP-T1-RE3 SIR112DP-T1-RE3 price SIR112DP-T1-RE3 distributor SIR112DP-T1-RE3 supplier SIR112DP-T1-RE3 wholesales