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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK762R6-40E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7130pF @ 25V
FET Feature -
Power Dissipation (Max) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STD7NM80-1
STMicroelectronics, N-Channel 800V 6.5A (Tc) 90W (Tc) Through Hole I-PAK, MDmesh™
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IPB160N04S4H1ATMA1
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FQB8N60CTM
ON Semiconductor, N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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FDMC7660S
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FDT86244
ON Semiconductor, N-Channel 150V 2.8A (Tc) 2.2W (Ta) Surface Mount SOT-223-4, PowerTrench®
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FDD6690A
ON Semiconductor, N-Channel 30V 12A (Ta), 46A (Tc) 3.3W (Ta), 56W (Tc) Surface Mount D-PAK (TO-252AA), PowerTrench®
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