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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSS806NE
Standard Package 3000
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V
Rds On (Max) @ Id, Vgs 57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id 0.75V @ 11µA
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 2.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 529pF @ 10V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
SIB456DK-T1-GE3
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Microchip Technology, N-Channel 100V 200mA (Tj) 360mW (Tc) Surface Mount SOT-23-3,
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CSD13385F5T
Texas Instruments, N-Channel 12V 4.3A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
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IXTH110N25T
IXYS, N-Channel 250V 110A (Tc) 694W (Tc) Through Hole TO-247 (IXTH),
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