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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7610-55AL
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6280pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPD06N80C3ATMA1
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FDD86250-F085
ON Semiconductor, N-Channel 150V 50A (Tc) 160W (Tj) Surface Mount TO-252, (D-Pak), Automotive, AEC-Q101, PowerTrench®
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VN2406L-G
Microchip Technology, N-Channel 240V 190mA (Tj) 1W (Tc) Through Hole TO-92-3,
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IXFK50N85X
IXYS, N-Channel 850V 50A (Tc) 890W (Tc) Through Hole TO-264, HiPerFET™
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