IPD80R3K3P7ATMA1
IPD80R3K3P7ATMA1
Part Number IPD80R3K3P7ATMA1 Description MOSFET N-CH 800V 1.9A TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 1.9A (Tc) 18W (Tc) Surface Mount PG-TO252-3
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IPD80R3K3P7ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD80R3K3P7 Standard Package 1 Manufacturer Infineon Technologies Series CoolMOS™ P7 Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 1.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.3Ohm @ 590mA, 10V Vgs(th) (Max) @ Id 3.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 120pF @ 500V FET Feature - Power Dissipation (Max) 18W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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