Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD80R3K3P7ATMA1

IPD80R3K3P7ATMA1

IPD80R3K3P7ATMA1

Part NumberIPD80R3K3P7ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 800V 1.9A TO252-3

DatasheetIPD80R3K3P7

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 1.9A (Tc) 18W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD80R3K3P7ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD80R3K3P7ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD80R3K3P7ATMA1.
We are offering IPD80R3K3P7ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD80R3K3P7ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD80R3K3P7
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.3Ohm @ 590mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs	5.8nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 500V
FET Feature	-
Power Dissipation (Max)	18W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD80R3K3P7ATMA1 - Related Products

	CSD17313Q2T	Texas Instruments, N-Channel 30V 5A (Ta) 2.4W (Ta), 17W (Tc) Surface Mount 6-WSON (2x2), NexFET™	View
	SI4058DY-T1-GE3	Vishay Siliconix, N-Channel 100V 10.3A (Tc) 5.6W (Tc) Surface Mount 8-SOIC,	View
	BSS138-7-F	Diodes Incorporated, N-Channel 50V 200mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,	View
	FQD4N25TM-WS	ON Semiconductor, N-Channel 250V 3A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount D-Pak, QFET®	View
	PSMN1R9-40PLQ	Nexperia USA Inc., N-Channel 40V 150A (Tc) 349W (Tc) Through Hole TO-220AB,	View
	SIR624DP-T1-GE3	Vishay Siliconix, N-Channel 200V 18.6A (Tc) 52W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®	View
	SI7190DP-T1-GE3	Vishay Siliconix, N-Channel 250V 18.4A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	CDM4-650 TR13	Central Semiconductor Corp, N-Channel 650V 4A (Ta) 620mW (Ta), 77W (Tc) Surface Mount DPAK,	View
	ZXMN3A01FTA	Diodes Incorporated, N-Channel 30V 1.8A (Ta) 625mW (Ta) Surface Mount SOT-23-3,	View
	TK14G65W,RQ	Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 130W (Tc) Surface Mount D2PAK, DTMOSIV	View
	ZVN2110ASTZ	Diodes Incorporated, N-Channel 100V 320mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible),	View
	CSD18509Q5B	Texas Instruments, N-Channel 40V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View

IPD80R3K3P7ATMA1 - Tags

IPD80R3K3P7ATMA1 IPD80R3K3P7ATMA1 PDF IPD80R3K3P7ATMA1 datasheet IPD80R3K3P7ATMA1 specification IPD80R3K3P7ATMA1 image IPD80R3K3P7ATMA1 India Renesas Electronics India IPD80R3K3P7ATMA1 buy IPD80R3K3P7ATMA1 IPD80R3K3P7ATMA1 price IPD80R3K3P7ATMA1 distributor IPD80R3K3P7ATMA1 supplier IPD80R3K3P7ATMA1 wholesales