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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7227-100B
Standard Package 2500
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2789pF @ 25V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 185°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN050-80BS,118
Nexperia USA Inc., N-Channel 80V 22A (Tc) 56W (Tc) Surface Mount D2PAK,
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BS870-7-F
Diodes Incorporated, N-Channel 60V 250mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,
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2N7000TA
ON Semiconductor, N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3,
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STL110N10F7
STMicroelectronics, N-Channel 100V 107A (Tc) 136W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VII
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FDMS8333L
ON Semiconductor, N-Channel 40V 22A (Ta), 76A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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TK25A60X5,S5X
Toshiba Semiconductor and Storage, N-Channel 600V 25A (Ta) 45W (Tc) Through Hole TO-220SIS, DTMOSIV-H
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STP105N3LL
STMicroelectronics, N-Channel 30V 80A (Tc) 140W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VI
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PSMN034-100BS,118
Nexperia USA Inc., N-Channel 100V 32A (Tc) 86W (Tc) Surface Mount D2PAK,
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IRL2910PBF
Infineon Technologies, N-Channel 100V 55A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®
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FDD8870
ON Semiconductor, N-Channel 30V 21A (Ta), 160A (Tc) 160W (Tc) Surface Mount TO-252AA, PowerTrench®
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SSM3K336R,LF
Toshiba Semiconductor and Storage, N-Channel 30V 3A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII-H
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PSMN6R5-25YLC,115
Nexperia USA Inc., N-Channel 25V 64A (Tc) 48W (Tc) Surface Mount LFPAK56, Power-SO8,
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