DMT10H025SSS-13
DMT10H025SSS-13
Part Number DMT10H025SSS-13 Description MOSFETN-CHAN 100V SO-8 Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 7.4A (Ta) 1.4W (Ta) Surface Mount 8-SO
To learn about the specification of DMT10H025SSS-13, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add DMT10H025SSS-13 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of DMT10H025SSS-13.
We are offering DMT10H025SSS-13 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
DMT10H025SSS-13 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet DMT10H025SSS Standard Package 2500 Manufacturer Diodes Incorporated Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 7.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 20A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1544pF @ 50V FET Feature - Power Dissipation (Max) 1.4W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
DMT10H025SSS-13 - Related ProductsMore >>
TK20V60W5,LVQ Toshiba Semiconductor and Storage, N-Channel 600V 20A (Ta) 156W (Tc) Surface Mount 4-DFN-EP (8x8), DTMOSIV
View
IPP65R150CFDXKSA2 Infineon Technologies, N-Channel 650V 22.4A (Tc) 195.3W (Tc) Through Hole PG-TO220-3, CoolMOS™ CFD2
View
IRFSL3006PBF Infineon Technologies, N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-262, HEXFET®
View
IPB80N08S2L07ATMA1 Infineon Technologies, N-Channel 75V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™
View
IXFA80N25X3 IXYS, N-Channel 250V 80A (Tc) 390W (Tc) Surface Mount TO-263AA, HiPerFET™
View
IPB032N10N5ATMA1 Infineon Technologies, N-Channel 100V 166A (Tc) 187W (Tc) Surface Mount PG-TO263-7, OptiMOS™
View
FDD6630A ON Semiconductor, N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-252, PowerTrench®
View
IPB042N10N3GATMA1 Infineon Technologies, N-Channel 100V 100A (Tc) 214W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
PMT280ENEAX Nexperia USA Inc., N-Channel 100V 1.5A (Ta) 770mW (Ta) Surface Mount SC-73,
View
DMG7430LFG-7 Diodes Incorporated, N-Channel 30V 10.5A (Ta) 900mW (Ta) Surface Mount PowerDI3333-8,
View
SI7110DN-T1-E3 Vishay Siliconix, N-Channel 20V 13.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
CSD17483F4T Texas Instruments, N-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
DMT10H025SSS-13 - Tags
English
