Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ FQI13N50CTU

FQI13N50CTU

FQI13N50CTU

Part NumberFQI13N50CTU

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 500V 13A I2PAK

DatasheetFQI13N50C

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 13A (Tc) 195W (Tc) Through Hole I2PAK (TO-262)

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FQI13N50CTU - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FQI13N50C
Standard Package	1000
Manufacturer	ON Semiconductor
Series	QFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	480mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2055pF @ 25V
FET Feature	-
Power Dissipation (Max)	195W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

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