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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK662R7-55C
Standard Package 800
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 258nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 15300pF @ 25V
FET Feature -
Power Dissipation (Max) 306W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Texas Instruments, N-Channel 100V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
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