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BVSS123LT1G

BVSS123LT1G

Part NumberBVSS123LT1G

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 170MA SOT-23-3

DatasheetBSS123LT1 Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 170mA (Ta) 225mW (Ta) Surface Mount SOT-23-3

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BVSS123LT1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSS123LT1 Datasheet
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	20pF @ 25V
FET Feature	-
Power Dissipation (Max)	225mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3

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