FQAF11N90C
FQAF11N90C
Part Number FQAF11N90C Description MOSFET N-CH 900V 7A TO-3PF Package / Case TO-3P-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 900V 7A (Tc) 120W (Tc) Through Hole TO-3PF
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FQAF11N90C - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQAF11N90C Standard Package 360 Manufacturer ON Semiconductor Series QFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.1Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3290pF @ 25V FET Feature - Power Dissipation (Max) 120W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PF Package / Case TO-3P-3 Full Pack
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