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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK964R7-80E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 92.1nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 15340pF @ 25V
FET Feature -
Power Dissipation (Max) 324W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SI7114ADN-T1-GE3
Vishay Siliconix, N-Channel 30V 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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AOD7S65
Alpha & Omega Semiconductor Inc., N-Channel 650V 7A (Tc) 89W (Tc) Surface Mount TO-252, (D-Pak), aMOS™
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STFU15N80K5
STMicroelectronics, N-Channel 800V 14A (Tc) 35W (Tc) Through Hole TO-220FP, MDmesh™ K5
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STD3N62K3
STMicroelectronics, N-Channel 620V 2.7A (Tc) 45W (Tc) Surface Mount DPAK, SuperMESH3™
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SIHU6N62E-GE3
Vishay Siliconix, N-Channel 620V 6A (Tc) 78W (Tc) Through Hole IPAK (TO-251),
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VN2210N3-G
Microchip Technology, N-Channel 100V 1.2A (Tj) 740mW (Tc) Through Hole TO-92-3,
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RJU002N06T106
Rohm Semiconductor, N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount UMT3,
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CSD16414Q5
Texas Instruments, N-Channel 25V 34A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6), NexFET™
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CSD18540Q5BT
Texas Instruments, N-Channel 60V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™
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IPS70R1K4P7SAKMA1
Infineon Technologies, N-Channel 700V 4A (Tc) 22.7W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7
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RS1E280GNTB
Rohm Semiconductor, N-Channel 30V 28A (Ta) 3W (Ta), 31W (Tc) Surface Mount 8-HSOP,
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SI4434DY-T1-E3
Vishay Siliconix, N-Channel 250V 2.1A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®
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