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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK964R7-80E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 92.1nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 15340pF @ 25V
FET Feature -
Power Dissipation (Max) 324W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SK8403190L
Panasonic Electronic Components, N-Channel 30V 10A (Ta), 19A (Tc) 2W (Ta), 19W (Tc) Surface Mount HSSO8-F1-B,
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BSC079N03LSCGATMA1
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IRF740STRLPBF
Vishay Siliconix, N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,
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IRLL110TRPBF
Vishay Siliconix, N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223,
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TK7P60W5,RVQ
Toshiba Semiconductor and Storage, N-Channel 600V 7A (Ta) 60W (Tc) Surface Mount DPAK, DTMOSIV
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TSM9N90ECZ C0G
Taiwan Semiconductor Corporation, N-Channel 900V 9A (Tc) 89W (Tc) Through Hole TO-220,
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FDMS86322
ON Semiconductor, N-Channel 80V 13A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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IAUT165N08S5N029ATMA2
Infineon Technologies, N-Channel 80V 165A (Tc) 167W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™
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Taiwan Semiconductor Corporation, N-Channel 20V 6.7A (Tc) 1.56W (Tc) Surface Mount SOT-23,
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IRFB7434PBF
Infineon Technologies, N-Channel 40V 195A (Tc) 294W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™
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TPW4R50ANH,L1Q
Toshiba Semiconductor and Storage, N-Channel 100V 92A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance, U-MOSVIII-H
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IAUT200N08S5N023ATMA1
Infineon Technologies, N-Channel 80V 200A (Tc) 200W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™-5
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