BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1
Part Number BSZ180P03NS3EGATMA1
Description MOSFET P-CH 30V 39.6A TSDSON-8
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 30V 9A (Ta), 39.5A (Tc) 2.1W (Ta), 40W (Tc) Surface Mount PG-TSDSON-8
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BSZ180P03NS3EGATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSZ180P03NS3E G
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 39.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.1V @ 48µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2220pF @ 15V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerTDFN
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