Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4435FDY-T1-GE3

SI4435FDY-T1-GE3

SI4435FDY-T1-GE3

Part NumberSI4435FDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 12.6A 8SOIC

DatasheetSI4435FDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC

To learn about the specification of SI4435FDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4435FDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4435FDY-T1-GE3.
We are offering SI4435FDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4435FDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4435FDY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	19mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 15V
FET Feature	-
Power Dissipation (Max)	4.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4435FDY-T1-GE3 - Related Products

	SI4435DYTRPBF	Infineon Technologies, P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	IPD50P04P413ATMA1	Infineon Technologies, P-Channel 40V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™	View
	FDN340P	ON Semiconductor, P-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	ZXMP2120FFTA	Diodes Incorporated, P-Channel 200V 137mA (Ta) 1W (Ta) Surface Mount SOT-23F,	View
	DMP1096UCB4-7	Diodes Incorporated, P-Channel 12V 2.6A (Ta) 820mW (Ta) Surface Mount U-WLB1010-4,	View
	LP0701LG-G	Microchip Technology, P-Channel 16.5V 700mA (Tj) 1.5W (Tc) Surface Mount 8-SOIC,	View
	SQA403EJ-T1_GE3	Vishay Siliconix, P-Channel 30V 10A (Tc) 13.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single, Automotive, AEC-Q101, TrenchFET®	View
	SISH101DN-T1-GE3	Vishay Siliconix, P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®	View
	PMCM6501UPEZ	Nexperia USA Inc., P-Channel 20V 556mW Surface Mount 4-WLCSP (2x2),	View
	IRF7406TRPBF	Infineon Technologies, P-Channel 30V 5.8A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	DMP3056LSS-13	Diodes Incorporated, P-Channel 30V 7.1A (Ta) 2.5W (Ta) Surface Mount 8-SOP,	View
	SI3443DDV-T1-GE3	Vishay Siliconix, P-Channel 20V 4A (Ta), 5.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP, TrenchFET®	View

SI4435FDY-T1-GE3 - Tags

SI4435FDY-T1-GE3 SI4435FDY-T1-GE3 PDF SI4435FDY-T1-GE3 datasheet SI4435FDY-T1-GE3 specification SI4435FDY-T1-GE3 image SI4435FDY-T1-GE3 India Renesas Electronics India SI4435FDY-T1-GE3 buy SI4435FDY-T1-GE3 SI4435FDY-T1-GE3 price SI4435FDY-T1-GE3 distributor SI4435FDY-T1-GE3 supplier SI4435FDY-T1-GE3 wholesales