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SI1317DL-T1-GE3


SI1317DL-T1-GE3

Part NumberSI1317DL-T1-GE3

Manufacturer

Description

Datasheet

Package / CaseSC-70, SOT-323

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI1317DL-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs150mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.5nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds272pF @ 10V
FET Feature-
Power Dissipation (Max)500mW (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-323
Package / CaseSC-70, SOT-323

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