Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSS139
Standard Package	3000
Manufacturer	Infineon Technologies
Series	SIPMOS®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	0V, 10V
Rds On (Max) @ Id, Vgs	14Ohm @ 100µA, 10V
Vgs(th) (Max) @ Id	1V @ 56µA
Gate Charge (Qg) (Max) @ Vgs	3.5nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	76pF @ 25V
FET Feature	Depletion Mode
Power Dissipation (Max)	360mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3

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SI2356DS-T1-GE3	Vishay Siliconix, N-Channel 40V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount TO-236, TrenchFET®	View

BSS139H6327XTSA1

Part NumberBSS139H6327XTSA1