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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7210-55B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2453pF @ 25V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 185°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
DMTH6010SK3-13
Diodes Incorporated, N-Channel 60V 16.3A (Ta), 70A (Tc) 3.1W (Ta) Surface Mount TO-252,
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SIHP7N60E-GE3
Vishay Siliconix, N-Channel 600V 7A (Tc) 78W (Tc) Through Hole TO-220AB,
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IXTA05N100HV
IXYS, N-Channel 1000V 750mA (Tc) 40W (Tc) Surface Mount TO-263,
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FDMS7660AS
ON Semiconductor, N-Channel 30V 26A (Ta), 42A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™
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BSC0906NSATMA1
Infineon Technologies, N-Channel 30V 18A (Ta), 63A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™
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BST82,215
Nexperia USA Inc., N-Channel 100V 190mA (Ta) 830mW (Tc) Surface Mount TO-236AB, TrenchMOS™
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MCG30N03-TP
Micro Commercial Co, N-Channel 30V 30A (Tc) 25W Surface Mount DFN3030,
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IRLR120NTRPBF
Infineon Technologies, N-Channel 100V 10A (Tc) 48W (Tc) Surface Mount D-Pak, HEXFET®
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STU8N80K5
STMicroelectronics, N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-251, SuperMESH5™
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IRFB7730PBF
Infineon Technologies, N-Channel 75V 195A (Tc) 375W (Tc) Through Hole TO-220AB, HEXFET®
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IRL640STRLPBF
Vishay Siliconix, N-Channel 200V 17A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,
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SIA468DJ-T1-GE3
Vishay Siliconix, N-Channel 30V 37.8A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET® Gen IV
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