BSP299H6327XUSA1


BSP299H6327XUSA1

Part NumberBSP299H6327XUSA1

Manufacturer

Description

Datasheet

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

BSP299H6327XUSA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1000
ManufacturerInfineon Technologies
SeriesSIPMOS®
PackagingTape & Reel (TR)
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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