BSP299H6327XUSA1
BSP299H6327XUSA1
Part Number BSP299H6327XUSA1
Description MOSFET N-CH 500V 0.4A SOT-223
Package / Case TO-261-4, TO-261AA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 500V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
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BSP299H6327XUSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSP299
Standard Package 1000
Manufacturer Infineon Technologies
Series SIPMOS®
Packaging Tape & Reel (TR)
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
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