BSP299H6327XUSA1
BSP299H6327XUSA1
Part Number BSP299H6327XUSA1 Description MOSFET N-CH 500V 0.4A SOT-223 Package / Case TO-261-4, TO-261AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 500V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
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BSP299H6327XUSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSP299 Standard Package 1000 Manufacturer Infineon Technologies Series SIPMOS® Packaging Tape & Reel (TR) Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4Ohm @ 400mA, 10V Vgs(th) (Max) @ Id 4V @ 1mA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA
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